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U637H256
Not Recommended For New Designs Features High-performance CMOS nonvolatile static RAM 32768 x 8 bits 25 ns Access Time 10 ns Output Enable Access Time ICC = 15 mA typ. at 200 ns Cycle Time Unlimited Read and Write Cycles to SRAM Automatic STORE to EEPROM on Power Down using charge stored in an integrated capacitor Software initiated STORE Automatic STORE Timing 106 STORE cycles to EEPROM 100 years data retention in EEPROM Automatic RECALL on Power Up Software RECALL Initiation Unlimited RECALL cycles from EEPROM Single 5 V 10 % Operation Operating temperature range: 0 to 70 C -40 to 85C QS 9000 Quality Standard (MIL STD 883C M3015.7) RoHS compliance and Pb- free Package: PDIP28 (600 mil) Description The U637H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled. The U637H256 is a fast static RAM (25 ns) with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an integrated capacitor. Transfers from the EEPROM to the SRAM (the RECALL operation) take place automatically on power up. The U637H256 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity. STORE cycles also may be initiated under user control via a software sequence. Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed. Because a sequence of addresses is used for STORE initiation, it is important that no other read or write accesses intervene in the sequence or the sequence will be aborted. RECALL cycles may also be initiated by a software sequence. Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells. The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data can be recalled an unlimited number of times. The U637H256 is pin compatible with standard SRAMs and standard battery backed SRAMs.
CapStore 32K x 8 nvSRAM
Pin Configuration
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 VCC W A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
Pin Description
Signal Name A0 - A14 DQ0 - DQ7 E G W VCC VSS
Signal Description Address Inputs Data In/Out Chip Enable Output Enable Write Enable Power Supply Voltage Ground
PDIP 21
20 19 18 17 16 15
Top View August 15, 2006 STK Control #ML0056 1 Rev 1.1
U637H256
Block Diagram
EEPROM Array 512 x (64 x 8) A5 A6 A7 A8 A9 A11 A12 A13 A14 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 E W Input Buffers STORE Row Decoder SRAM Array 512 Rows x 64 x 8 Columns
Store/ Recall Control
VCC VSS
RECALL
Power Control
VCC
Column I/O Column Decoder
Software Detect
A0 - A13
A0 A1 A2 A3 A4 A10
G
Truth Table forSRAM Operations Operating Mode Standby/not selected Internal Read Read Write * H or L Characteristics
All voltages are referenced to VSS = 0 V (ground). All characteristics are valid in the power supply voltage range and in the operating temperature range specified. Dynamic measurements are based on a rise and fall time of 5 ns, measured between 10 % and 90 % of VI, as well as input levels of VIL = 0 V and VIH = 3 V. The timing reference level of all input and output signals is 1.5 V, with the exception of the tdis-times and ten-times, in which cases transition is measured 200 mV from steady-state voltage.
E H L L L
W
*
G
*
DQ0 - DQ7 High-Z High-Z Data Outputs Low-Z Data Inputs High-Z
H H L
H L
*
Absolute Maximum Ratingsa Power Supply Voltage Input Voltage Output Voltage Power Dissipation Operating Temperature Storage Temperature
a:
Symbol VCC VI VO PD
Min. -0.5 -0.3 -0.3
Max. 7 VCC+0.5 VCC+0.5 1
Unit V V V W C C C
C-Type K-Type
Ta Tstg
0 -40 -65
70 85 150
Stresses greater than those listed under Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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Recommended Operating Conditions Power Supply Voltage Input Low Voltage Input High Voltage Symbol VCC VIL VIH -2 V at Pulse Width 10 ns permitted Conditions Min. 4.5 -0.3 2.2 Max. 5.5 0.8 VCC+0.3 Unit V V V
C-Type DC Characteristics Operating Supply Currentb Symbol ICC1 VCC VIL VIH tc VCC E W VIL VIH VCC W VIL VIH VCC E tc VCC E VIL VIH Conditions Min. = 5.5 V = 0.8 V = 2.2 V = 25 ns = 5.5 V 0.2 V VCC-0.2 V 0.2 V VCC-0.2 V = 5.5 V VCC-0.2 V 0.2 V VCC-0.2 V = 5.5 V = VIH = 25 ns = 5.5 V VCC-0.2 V 0.2 V VCC-0.2 V Max. 95
K-Type Unit Min. Max. 100 mA
Average Supply Current duringc STORE
ICC2
6
7
mA
Operating Supply Currentb at tcR = 200 ns (Cycling CMOS Input Levels) Standby Supply Currentd (Cycling TTL Input Levels) Standby Supply Curentd (Stable CMOS Input Levels)
ICC3
20
20
mA
ICC(SB)1
40
42
mA
ICC(SB)
3
3
mA
b: ICC1 and ICC3 are depedent on output loading and cycle rate. The specified values are obtained with outputs unloaded. The current ICC1 is measured for WRITE/READ - ratio of 1/2. c: ICC2 is the average current required for the duration of the SoftStore STORE cycle. d: Bringing E VIH will not produce standby current levels until a software initiated nonvolatile cycle in progress has timed out. See MODE SELECTION table. The current ICC(SB)1 is measured for WRITE/READ - ratio of 1/2.
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C-Type DC Characteristics Symbol VCC IOH IOL VCC VOH VOL VCC High Low Output Leakage Current High at Three-State- Output Low at Three-State- Output IOHZ IOLZ IIH IIL VIH VIL VCC VOH VOL Conditions Min. Output High Voltage Output Low Voltage Output High Current Output Low Current Input Leakage Current VOH VOL IOH IOL = 4.5 V =-4 mA = 8 mA = 4.5 V = 2.4 V = 0.4 V = 5.5 V = 5.5 V = 0V = 5.5 V = 5.5 V = 0V 1 -1 1 -1 2.4 0.4 -4 8 Max.
K-Type Unit Min. 2.4 0.4 -4 8 Max. V V mA mA
1 -1
A A
1 -1
A A
SRAM Memory Operations
No. 1 2 3 4 5 6 7 8 9
Switching Characteristics Read Cycle Read Cycle Timef Address Access Time to Data Validg Chip Enable Access Time to Data Valid Output Enable Access Time to Data Valid E HIGH to Output in High-Zh G HIGH to Output in High-Zh E LOW to Output in Low-Z G LOW to Output in Low-Z Output Hold Time after Address Change
Symbol Min. Alt. tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tELQX tGLQX tAXQX tELICCH tEHICCL IEC tcR ta(A) ta(E) ta(G) tdis(E) tdis(G) ten(E) ten(G) tv(A) tPU tPD 5 0 3 0 25 25 25 25 10 10 10 ns ns ns ns ns ns ns ns ns ns ns Max. Unit
10 Chip Enable to Power Activee 11 Chip Disable to Power Standbyd, e
e: f: g: h: Parameter guaranteed but not tested. Device is continuously selected with E and G both Low. Address valid prior to or coincident with E transition LOW. Measured 200 mV from steady state output voltage.
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Read Cycle 1: Ai-controlled (during Read cycle: E = G = VIL, W = VIH)f
tcR (1)
Ai DQi
Output Previous Data Valid tv(A) (9)
Address Valid ta(A) (2) Output Data Valid
Read Cycle 2: G-, E-controlled (during Read cycle: W = VIH)g
tcR (1)
Ai E G DQi
Output High Impedance
Address Valid ta(A) (2) ta(E) (3) ten(E) (7) ta(G) (4) ten(G) (8) tPU (10) ACTIVE STANDBY
tdis(E) (5) tPD (11) tdis(G) (6)
Output Data Valid
ICC
No.
Switching Characteristics Write Cycle
Symbol Min. Alt. #1 Alt. #2 tAVAV tWLWH tWLEH tAVWL tAVWH tELWH tELEH tDVWH tWHDX tWHAX tWLQZ tWHQX tDVEH tEHDX tEHAX tAVEL tAVEH tAVAV IEC tcW tw(W) tsu(W) tsu(A) tsu(A-WH) tsu(E) tw(E) tsu(D) th(D) th(A) tdis(W) ten(W) 5 25 20 20 0 20 20 20 10 0 0 10 ns ns ns ns ns ns ns ns ns ns ns ns Max. Unit
12 Write Cycle Time 13 Write Pulse Width 14 Write Pulse Width Setup Time 15 Address Setup Time 16 Address Valid to End of Write 17 Chip Enable Setup Time 18 Chip Enable to End of Write 19 Data Setup Time to End of Write 20 Data Hold Time after End of Write 21 Address Hold after End of Write 22 W LOW to Output in High-Zh, i 23 W HIGH to Output in Low-Z
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Write Cycle #1: W-controlledj
tcW (12)
Ai E W
tsu(A)
(15)
Address Valid tsu(E) (17) tsu(A-WH) (16) tw(W) (13) tsu(D) (19) tdis(W) Previous Data Valid th(D) (20) th(A) (21)
DQi
Input
Input Data Valid
(22)
DQi
Output
ten(W) (23) High Impedance
Write Cycle #2: E-controlledj
tcW (12)
Ai E W DQi
Input tsu(A) (15)
Address Valid tw(E) (18) tsu(W) (14) tsu(D) (19) th(D) (20) th(A) (21)
Input Data Valid High Impedance
DQi
Output
undefined
L- to H-level
H- to L-level
i: j:
If W is low and when E goes low, the outputs remain in the high impedance state. E or W must be VIH during address transition.
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Nonvolatile Memory Operations
Mode Selection A13 - A0 (hex) X X X 0E38 31C7 03E0 3C1F 303F 0FC0 0E38 31C7 03E0 3C1F 303F 0C63
E H L L L
W X H L H
Mode Not Selected Read SRAM Write SRAM Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Nonvolatile STORE Read SRAM Read SRAM Read SRAM Read SRAM Read SRAM Nonvolatile RECALL
I/O Output High Z Output Data Input Data Output Data Output Data Output Data Output Data Output Data Output High Z Output Data Output Data Output Data Output Data Output Data Output High Z
Power Standby Active Active Active
Notes
m
k, l k, l k, l k, l k, l k, l k, l k, l k, l k, l k, l k, l
L
H
Active
The six consecutive addresses must be in order listed. W must be high during all six consecutive cycles. See STORE cycle and RECALL cycle tables and diagrams for further details. The following six-address sequence is used for testing purposes and should not be used: 0E38, 31C7, 03E0, 3C1F, 303F, 339C. l: While there are 15 addresses on the U637H256, only the lower 14 are used to control software modes. Activation of nonvolatile cycles does not depend on the state of G. m: I/O state assumes that G VIL.
k:
No.
PowerStore Power Up RECALL
Symbol Conditions Alt. tRESTORE tPDSTORE tDELAY VSWITCH 1 4.0 4.5 IEC 650 10 s ms s V Min. Max. Unit
24 Power Up RECALL Durationn 25 STORE Cycle Durationf, e 26 Time allowed to Complete SRAM Cyclef Low Voltage Trigger Level
n: tRESTORE starts from the time VCC rises above VSWITCH.
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PowerStore and automatic Power Up RECALL VCC 5.0 V VSWITCH
t PowerStore tPDSTORE Power Up RECALL W DQi POWER UP RECALL BROWN OUT BROWN OUT NO STORE PowerStore (NO SRAM WRITES)
(25)
(24)
(24)
tRESTORE
tRESTORE tDELAY
No.
Software Controlled STORE/RECALL Cyclek, o
Symbol Min. Alt. tAVAV tELQZ tELQXS tELQXR tAVELN tELEHN tEHAXN IEC tcR tdis(E)SR td(E)S td(E)R tsu(A)SR tw(E)SR th(A)SR 0 20 0 25 600 10 20 ns ns ms s ns ns ns Max. Unit
27 STORE/RECALL Initiation Time 28 Chip Enable to Output Inactivep 29 STORE Cycle Timeq 30 RECALL Cycle Timer 31 Address Setup to Chip Enables 32 Chip Enable Pulse Widths, t 33 Chip Disable to Address Changes
o: p: q: r: s: t:
The software sequence is clocked with E controlled READs. Once the software controlled STORE or RECALL cycle is initiated, it completes automatically, ignoring all inputs. Note that STORE cycles (but not RECALL) are inhibited by VCC < VSWITCH (STORE inhibit). An automatic RECALL also takes place at power up, starting when VCC exceeds VSWITCH and takes tRESTORE. VCC must not drop below VSWITCH once it has been exceeded for the RECALL to function properly. Noise on the E pin may trigger multiple READ cycles from the same address and abort the address sequence. If the Chip Enable Pulse Width is less than ta(E) (see Read Cycle) but greater than or equal tw(E)SR, than the data may not be valid at the end of the low pulse, however the STORE or RECALL will still be initiated.
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U637H256
Software Controlled STORE/RECALL Cycles, t, u, v (E = HIGH after STORE initiation)
tcR (27)
tcR (27) ADDRESS 6 tw(E)SR
(33) th(A)SR (31) (32) (33) th(A)SR
Ai E
tsu(A)SR
ADDRESS 1 tw(E)SR
(32) (31)
tdis(E) (5) td(E)R (30)
DQi
Output
High Impedance
tsu(A)SR VALID
td(E)S (29) VALID tdis(E)SR (28)
Software Controlled STORE/RECALL Cycles, t, u, v (E = LOW after STORE initiation)
tcR (27)
Ai E DQi
Output tsu(A)SR (31)
ADDRESS 1 tw(E)SR
(32) (33) (31)
ADDRESS 6 th(A)SR (33) td(E)S (29) td(E)R (30)
th(A)SR High Impedance VALID
tsu(A)SR
VALID tdis(E)SR (28)
u: W must be HIGH when E is LOW during the address sequence in order to initiate a nonvolatile cycle. G may be either HIGH or LOW throughout. Addresses 1 through 6 are found in the mode selection table. Address 6 determines wheter the U637H256 performs a STORE or RECALL. v: E must be used to clock in the address sequence for the Software controlled STORE and RECALL cycles.
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Test Configuration for Functional Check
5V
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14
VCCx
relevant test measurement
Input level according to the
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
VIH
VIL
ment of all 8 output pins
Simultaneous measure-
480
VO 30 pF w 255
E W G
VSS
w: In measurement of tdis-times and ten-times the capacitance is 5 pF. x: Between VCC and V SS must be connected a high frequency bypass capacitor 0.1 F to avoid disturbances.
Capacitancee Input Capacitance Output Capacitance
Conditions VCC VI f Ta = 5.0 V = VSS = 1 MHz = 25 C
Symbol CI CO
Min.
Max. 8 7
Unit pF pF
All Pins not under test must be connected with ground by capacitors. Ordering Code Example Type U637H256 D K 25 G1 Leadfree Option G1 = Leadfree Green Package
Package D = PDIP28 (600mil) Operating Temperature Range C = 0 to 70 C K = -40 to 85 C Device Marking (example) Product specification
Access Time 25 = 25 ns
ZMD U637H256DK 25 Z 0425 G1
Date of manufacture (The first 2 digits indicating the year, and the last 2 digits the calendar week.) Leadfree Green Package Rev 1.1 August 15, 2006
Internal Code
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U637H256
Device Operation The U637H256 has two separate modes of operation: SRAM mode and nonvolatile mode. The memory operates in SRAM mode as a standard fast static RAM. Data is transferred in nonvolatile mode from SRAM to EEPROM (the STORE operation) or from EEPROM to SRAM (the RECALL operation). In this mode SRAM functions are disabled. STORE cycles may be initiated under user control via a software sequence and are also automatically initiated when the power supply voltage level of the chip falls below VSWITCH. RECALL operations are automatically initiated upon power up and may also occur when the VCC rises above VSWITCH, after a low power condition. RECALL cycles may also be initiated by a software sequence. SRAM READ The U637H256 performs a READ cycle whenever E and G are LOW and W is HIGH. The address specified on pins A0 - A14 determines which of the 32768 data bytes will be accessed. When the READ is initiated by an address transition, the outputs will be valid after a delay of tcR. If the READ is initiated by E or G, the outputs will be valid at ta(E) or at ta(G), whichever is later. The data outputs will repeatedly respond to address changes within the tcR access time without the need for transition on any control input pins, and will remain valid until another address change or until E or G is brought HIGH or W is brought LOW. SRAM WRITE A WRITE cycle is performed whenever E and W are LOW. The address inputs must be stable prior to entering the WRITE cycle and must remain stable until either E or W goes HIGH at the end of the cycle. The data on pins DQ0 - 7 will be written into the memory if it is valid tsu(D) before the end of a W controlled WRITE or tsu(D) before the end of an E controlled WRITE. It is recommended that G is kept HIGH during the entire WRITE cycle to avoid data bus contention on the common I/O lines. If G is left LOW, internal circuitry will turn off the output buffers tdis (W) after W goes LOW. Automatic STORE During normal operation, the U637H256 will draw current from VCC to charge up an integrated capacitor. This stored charge will be used by the chip to perform a single STORE operation. If the voltage on the VCC pin drops below VSWITCH, the part will automatically disconnect the internal components from the external power supply with a typical delay of 150 ns and initiate a STORE operation with tPDSTORE max. 10 ms. August 15, 2006 STK Control #ML0056 11 1. 2. 3. 4. 5. 6. Read addresses Read addresses Read addresses Read addresses Read addresses Read addresses 0E38 31C7 03E0 3C1F 303F 0FC0 (hex) (hex) (hex) (hex) (hex) (hex) Valid READ Valid READ Valid READ Valid READ Valid READ Initiate STORE Cycle In order to prevent unneeded STORE operations, automatic STORE will be ignored unless at least one WRITE operation has taken place since the most recent STORE or RECALL cycle. Software initiated STORE cycles are performed regardless of whether or not a WRITE operation has taken place. SRAM READ and WRITE operations that are in progress after an automatic STORE cycle on power down is requested are given time to complete before the STORE operation is initiated. During tDELAY multiple SRAM READ operations may take place. If a WRITE is in progress it will be allowed a time, tDELAY, to complete. Any SRAM WRITE cycles requested after the VCC pin drops below VSWITCH will be inhibited. Automatic RECALL During power up, an automatic RECALL takes place. At a low power condition (power supply voltage < VSWITCH) an internal RECALL request may be latched. As soon as power supply voltage exceeds the sense voltage of VSWITCH, a requested RECALL cycle will automatically be initiated and will take tRESTORE to complete. If the U637H256 is in a WRITE state at the end of power up RECALL, the SRAM data will be corrupted. To help avoid this situation, a 10 k resistor should be connected between W and power supply voltage. Software Nonvolatile STORE The U637H256 software controlled STORE cycle is initiated by executing sequential READ cycles from six specific address locations. By relying on READ cycles only, the U637H256 implements nonvolatile operation while remaining compatible with standard 32K x 8 SRAMs. During the STORE cycle, an erase of the previous nonvolatile data is performed first, followed by a parallel programming of all the nonvolatile elements. Once a STORE cycle is initiated, further inputs and outputs are disabled until the cycle is completed. Because a sequence of addresses is used for STORE initiation, it is important that no other READ or WRITE accesses intervene in the sequence or the sequence will be aborted. To initiate the STORE cycle the following READ sequence must be performed:
Rev 1.1
U637H256
Once the sixth address in the sequence has been entered, the STORE cycle will commence and the chip will be disabled. It is important that READ cycles and not WRITE cycles be used in the sequence, although it is not necessary that G be LOW for the sequence to be valid. After the tSTORE cycle time has been fulfilled, the SRAM will again be activated for READ and WRITE operation. When VCC < VSWITCH all software STORE operations will be inhibited. Any SRAM WRITE cycles requested after the VCC pin drops below VSWITCH will be inhibited. Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells. After td(E)R cycle time the SRAM will once again be ready for READ and WRITE operations.The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data can be recalled an unlimited number of times. Low Average Active Power The U637H256 has been designed to draw significantly less power when E is LOW (chip enabled) but the access cycle time is longer than 55 ns. When E is HIGH the chip consumes only standby current. The overall average current drawn by the part depends on the following items: 1. CMOS or TTL input levels 2. the time during which the chip is disabled (E HIGH) 3. the cycle time for accesses (E LOW) 4. the ratio of READs to WRITEs 5. the operating temperature 6. the VCC level
Software Nonvolatile RECALL A RECALL cycle of the EEPROM data into the SRAM is initiated with a sequence of READ operations in a manner similar to the STORE initiation. To initiate the RECALL cycle the following sequence of READ operations must be performed: 1. 2. 3. 4. 5. 6. Read addresses Read addresses Read addresses Read addresses Read addresses Read addresses 0E38 31C7 03E0 3C1F 303F 0C63 (hex) (hex) (hex) (hex) (hex) (hex) Valid READ Valid READ Valid READ Valid READ Valid READ Initiate RECALL Cycle
The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved.
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LIFE SUPPORT POLICY SIMTEK products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SIMTEK product could create a situation where personal injury or death may occur. Components used in life-support devices or systems must be expressly authorized by SIMTEK for such purpose. LIMITED WARRANTY The information in this document has been carefully checked and is believed to be reliable. However SIMTEK Corporation (SIMTEK) makes no guarantee or warranty concerning the accuracy of said information and shall not be responsible for any loss or damage of whatever nature resulting from the use of, or reliance upon it. The information in this document describes the type of component and shall not be considered as assured characteristics. SIMTEK does not guarantee that the use of any information contained herein will not infringe upon the patent, trademark, copyright, mask work right or other rights of third parties, and no patent or licence is implied hereby. This document does not in any way extent SIMTEK's warranty on any product beyond that set forth in its standard terms and conditions of sale. SIMTEK reserves terms of delivery and reserves the right to make changes in the products or specifications, or both, presented in this publication at any time and without notice.
August 15, 2006
Simtek Corporation 4250 Buckingham Drive suite 100 * Colorado Springs, CO 80907 * USA Phone: +(800)637-1667 * Fax: +(719)531-9481 * Email: information@simtek.com * http://www.simtek.com
Change record
Date/Rev 01.11.2001 04.12.2003 13.04.2004 21.04.2004 7.4.2005 31.03.2006 15.08.2006 Name Ivonne Steffens Matthias Schniebel Matthias Schniebel Matthias Schniebel Stefan Gunther Simtek Simtek Change format revision and release for "Memory CD 2002" ICC = 15 mA typ. at 200 ns Cycle Time Operating Supply Current at tcR = 200 ns: ICC3 = 20 mA removing "Preliminary" adding "Leadfree Green Package" to ordering information adding "Device Marking" add RoHS compliance and Pb- free, 106 endurance cycles and 100a data retention Assigned Simtek Document Control Number Moved Product to End of Life Status

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